Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.822991
Title: Modelling and design of non-foster class-J power amplifier for wireless communication systems
Author: Akwuruoha, Charles Nwakanma
ISNI:       0000 0005 0289 4834
Awarding Body: University of Manchester
Current Institution: University of Manchester
Date of Award: 2018
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Abstract:
This thesis presents a novel use of non-Foster circuit in the input matching network of Class-J power amplifier to provide the negative capacitance required to cancel out the power transistor input parasitic capacitance in order to enhance PA performance in terms of drain efficiency, power added efficiency, output power and power gain. This research work is the first reported use of non-Foster circuit to enhance the performance of Class-J PA. Hence, this work provides an alternative method of enhancing Class-J PA performance. Medium power MMIC Class-J GaAs pHEMT and GaN HEMT PAs operating in the V-band and C-band frequency ranges of 56 to 58 GHz and 4.8 to 5.2 GHz respectively, as well as high power Class-J GaN HEMT PAs operating in the C-band and S-band frequency ranges of 4.2 to 4.5 GHz and 2.05 to 2.15 GHz respectively, are presented. The drain efficiency, PAE, output power and power gain of the PAs with NFC are higher than those without NFC. The V-band MMIC Class-J GaAs pHEMT PA with NFC has 53.9% drain efficiency, 34% PAE, 14 dBm output power and 4 dB power gain whereas the PA without NFC has 43.6% drain efficiency, 33% PAE, 13.4 dBm output power and 3.4 dB power gain at 57 GHz centre frequency. The C-band MMIC Class-J GaN HEMT PA with NFC has 26.5% drain efficiency, 18% PAE, 25.6 dBm output power and 4.6 dBm power gain whereas the PA without NFC has 11.5% drain efficiency, 8% PAE, 22.2 dBm output power and 1.2 dB power gain at 5 GHz centre frequency. The discrete C-band Class-J GaN HEMT PA with NFC has 41.1% drain efficiency, 36.6% PAE, 41 dBm (12.6 W) output power and 9 dB power gain whereas the PA without NFC has 36.8% drain efficiency, 31% PAE, 40 dBm (10 W) output power and 7.9 dB power gain at 4.35 GHz centre frequency. The discrete S-band Class-J GaN HEMT PA with NFC has 64% drain efficiency, 57.6% PAE, 41.9 dBm (15.5 W) output power and 10 dB power gain whereas the PA without NFC has 45.5% drain efficiency, 40.5% PAE, 40.5 dBm (11.2 W) output power and 8.5 dB power gain at 2.1 GHz centre frequency.
Supervisor: Hu, Zhirun ; So, Ka Chun Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.822991  DOI: Not available
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