Use this URL to cite or link to this record in EThOS:
Title: Low temperature thermal oxidation of epitaxial 3C-SiC
Author: Cregeen, Joseph
ISNI:       0000 0004 9357 9815
Awarding Body: University of Warwick
Current Institution: University of Warwick
Date of Award: 2018
Availability of Full Text:
Access from EThOS:
Access from Institution:
Silicon Carbide (SiC) is a wide-bandgap semiconductor which has promising potential as a future material for power electronics devices such as metal-oxide-semiconductor field effect transistors (MOSFETs). The aim of this project was to take cubic SiC (3C-SiC) grown on silicon (Si) substrates by reduced-pressure chemical vapour deposition (RPCVD) and investigate whether low-temperature (< 1000 0C) dry oxidation is a suitable method for growing the dielectric oxide layers vital for device fabrication. To this end, heteroepitaxially grown 3C-SiC was oxidised at 985 0C and a range of physical and electrical characterisation techniques were employed to assess the grown oxide. X-ray reflectance (XRR) and cross-sectional transmission electron microscopy (X-TEM) analysis suggested a growth rate of around 4.08 × 10-2 nm/min, comparable to that achieved on 4H-SiC. Qualitative analysis showed that this oxide closely followed the surface morphology of the 3C-SiC, and atomic force microscopy (AFM) proved that the oxide did not significantly alter the surface roughness of the as-grown 3C-SiC epilayers. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) showed that the oxide had carbon (C) distributed inhomogeneously throughout the oxide, which may have served as charge traps at the oxide/3C-SiC interface and contributed to leakage through the oxide by trap-assisted tunnelling (TAT). The highest concentration of C was at the interface, totalling 25% of the material present. Capacitance-voltage (CV), conductance-voltage (GV), and current-voltage (IV) analysis provided information about the electrical properties of the grown oxide. While a small inversion population was observed in the CV data, this quickly collapsed under negative bias. Relatively high leakage current through the oxide is the suspected cause of this. While leakage was high, the oxide/3C-SiC interface showed a relatively small interface state density (Dit) of 1 × 1010 cm-2eV-1, which is comparable to that seen on similar material after post-oxidation annealing (POA), despite the fact that none was performed on this material. POA may further improve this Ditfigure by up to an order of magnitude. In summary, this work provides some evidence that heteroepitaxially grown 3C-SiC is a viable material for power device applications, but optimisation of the oxidation method and post-oxidation treatment is required to make this material realise its full potential.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ed.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: QC Physics