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Title: New applications of excimer lamps to the low temperature photo-deposition of thin films
Author: Bergonzo, Philippe
Awarding Body: University of London
Current Institution: University College London (University of London)
Date of Award: 1994
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Over the last decade, the requirement for low temperature processing in the semiconductor industry has become apparent due to the continued reduction in device geometry and the emergence of temperature sensitive materials. Of the low temperature techniques available, photo-enhanced processing of materials is very promising since the growing films are not subject to damaging ionic bombardment which is present in plasma assisted systems. Here is presented the development of a flexible large area, low temperature photo enhanced chemical vapour deposition reactor (photo-CVD) for applications to low temperature thin films processing. The development of novel excimer lamps has opened up the field of direct photo- CVD. Such lamps are a cheap and intense source of visible, UV and vacuum ultraviolet radiation (VUV: below 200nm). The major breakthrough with the development of these lamps is that they offer a large number of wavelengths that can be used for selective photo-CVD. The fabrication and characterisation of those light sources were conducted, and various devices generating up to a few watts are presented. Applications of the available radiation are also presented such as for the direct VUV enhanced generation of ozone and various metal-organic depositions (MOD). For the first time, the 172nm radiation of a xenon excimer lamp has been used to deposit silicon dioxide (SiO2), silicon nitride (Si3N4), and silicon oxynitride films from the photo-CVD of gas mixtures of silane with nitrous oxide and ammonia, and at temperatures as low as 300°C. Fast deposition (up to 500A/min) of SiO2 was also achieved by irradiating silane and oxygen gas mixtures. Investigations into the deposition photochemistry are reported, together with the characterisation of the deposited material properties. Good SiO2 and Si3N4 film quality was obtained, as well as a very good control of the stoichiometry in the case of silicon oxynitride film deposition, therefore providing interesting perspectives for electronic and optical applications.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available