Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.806323
Title: State-of-the-art InAs/GaAs quantum dot material for optical telecommunication
Author: Ali Sobhani, Soroush
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2020
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Abstract:
This thesis reports on the characterization of the state-of-the-art In(Ga)As/GaAs quantum dot (QD) material grown by molecular beam epitaxy for optical telecommunication applications. A wide variety of characterization methods are employed to investigate the material properties and characteristics of a number of QD-based devices enabling future device optimization. The motivation that prompted this study was predicated mainly upon two technological advantages. First, that the QDs gain spectra exhibits a symmetric gain shape and thus the change of refractive index with respect to gain is negligible at the lasing wavelength. This is therefore expected to result in a zero or a very small linewidth enhancement factor (LEF), which is desirable for instance, for high-speed modulation purposes where frequency chirp under modulation, which is directly proportional to the LEF, may be substantially reduced. Second, the fact that not only QDs exhibit a damped frequency response attributed to the carrier relaxation dynamics but also as the resilience of a laser to optical feedback is inversely proportional to the fourth power of the LEF, QD lasers are expected to demonstrate a relatively higher feedback insensitivity. This bodes well for operating these devices isolator free, which would be greatly cost-effective. The absorption and gain spectra of the QD active material are investigated in chapters 2 and 3, respectively. The LEF of QD lasers at a range of temperatures is studied in chapter 3, which confirms the expectation for the first time for In(Ga)As/GaAs QD lasers from -10 oC to 85 oC. Subsequently, the findings of chapters 2 and 3 are employed in chapter 4 with an electro absorption modulator device in mind which would be able to operate with chirp control. In chapter 5, the modulation response of QD lasers is investigated through examining the relative intensity noise (RIN) spectra in the electrical domain. The resilience of the devices to optical feedback is subsequently studied through the RIN characteristics at a range of temperatures. Chapter 6 provides a summary of the thesis findings and possible future works that may be carried out as continuation to this project, which fell outside of the remit of this work.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.806323  DOI: Not available
Keywords: Q Science (General) ; QC Physics ; TK Electrical engineering. Electronics Nuclear engineering
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