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Title: Fabrication and characterisation of air-sensitive InSe based heterostructure devices
Author: Hamer, Matthew
ISNI:       0000 0004 8504 1521
Awarding Body: University of Manchester
Current Institution: University of Manchester
Date of Award: 2018
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In this post-graphene age, there are a plethora of two-dimensional materials each with electronic properties that can be very different from traditional bulk materials. A problem however, is that a large number of these two-dimensional materials are air-sensitive, to varying extents, and degrade in ambient conditions. In this work, a methodology is established using the inert argon environment of a glovebox to fabricate and characterise various air-sensitive materials using optical and charge transport measurements. To demonstrate this, the optical properties of 2D Indium Selenide (InSe), a layered group III-IV metal chalcogenide, are characterised using methods such as angle resolved photoemission spectroscopy, photoluminescence and second order harmonic generation. This allows the band structure of InSe, calculated by density functional theorem, to be tested. The electronic transport properties of InSe are probed using InSe field-effect transistors. This sets the stage from which low-dimensional transport devices can be fabricated, using top gates to electrostatically confine InSe and create quantum dots and quantum point contacts.
Supervisor: Geim, Andre ; Gorbachev, Roman Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Quantum Point Contact ; ARPES ; Quantum Dot ; Graphene ; 2D Materials ; InSe