Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.796868
Title: The refractive index change in GaAs-AlGaAs quantum wells produced by neutral impurity induced disordering using boron and fluorine
Author: Hansen, Stein Ivar
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1993
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Abstract:
This thesis is concerned with quantum well intermixing in GaAs-AlGaAs multiple quantum well structures due to the impurity induced disordering effect using the electrically neutral impurities boron and fluorine. Particular emphasis is put on the refractive index change induced by the disordering process, and on methods of implementing this technique in the development of novel semiconductor laser structures. Selective intermixing of quantum wells is a powerful tool in the quest for developing functional integrated photonic structures. The use of impurities to enhance the interdiffusion rate of group III materials in quantum wells and barriers in well defined regions enables the creation of regions with lower optical propagation loss (< 4.5 dBcm-1).This can be utilised in low-loss waveguides for optical interconnects, extended cavity lasers, high efficiency distributed Bragg reflector lasers and more.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.796868  DOI: Not available
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