Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.796790
Title: Fabrication and high speed optoelectronic characterization of semiconductor devices
Author: Gontijo, Ivair
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1992
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Abstract:
This work is an investigation on the use of high speed optoelectronic techniques for the characterization of semiconductor devices. A low-frequency electrooptic probe station was demonstrated as well as the optoelectronic sampling scheme. The optoelectronic sampling technique relies on fast photoconductive switches for its operation. The autocorrelation signal detected in optoelectronic sampling was compared with signal detection by conventional techniques employing a sampling oscilloscope and a network analyser. The optoelectronic techniques described in this work depend critically on short-pulse lasers for the measurement of high speed devices. A fibre-grating pulse compressor was set-up to shorten the 120 ps pulses produced by a mode-locked Nd:YAG laser. Compression by a factor of 40 was demonstrated and nearly transform limited pulses of 3 ps duration were obtained. However, the output of the pulse compressor is very noisy and the output power is not high enough to enable electrooptic sampling experiments, in a jitter-free scheme. The same Nd:YAG laser was frequency doubled and used to synchronously pump a rhodamine 6G dye laser. Autocorrelation measurements obtained with the dye laser are again, very noisy and with poor reproducibility. The noise problems with the pulse compressor and with the dye laser were traced back to the Nd:YAG pump laser. It is concluded that this laser should be avoided as the source of short pulses for the electrooptic and optoelectronic measurement techniques. The use of a feedback loop is likely to reduce the noise in this laser, but drift in the intensity in a long time scale would still be present. A mode-locked Ti:Sapphire laser was also used for measurements in this project. Autocorrelation measurements taken with this laser are totally reproducible and contain little or no noise. The devices measured in this project were made by a combination of electron-beam lithography and photolithography. The use of these two lithography techniques together was made possible by the design of a mask set with alignment marks which can be used for registration in a mask aligner and in the electron beam lithography machine. Discrete devices were made and characterized by electrical techniques. Fabrication procedures were developed for resistors, Metal-Insulator-Metal (MIM) capacitors and for the Optoelecttonic Sampling Device (OSD). Discrete Mesfets were fabricated on MBE grown epilayers and their I-V characteristics were measured. A simplified optoelectronic sampling device was designed and made in a single lithographic step. It provides a quick way of producing devices in which autocorrelation measurements can be performed to determine the carrier lifetime in the substrate material. The optoelectronic sampling devices were made on four different substrate materials. The first one is a high purity, MBE grown GaAs epilayer, with very long lifetime (2ns). The control samples were made on "standard" semi-insulating GaAs, whose carrier lifetime is ~200 ps. Proton implantation in some of these devices made on SI GaAs substrate was used as a means of shortening the carrier lifetime, to produce fast turn-off times in the photoconductive switches. The lifetime after implantation of 4 x 10e14 protons/cm2 was estimated from an optoelectronic sampling measurement, to be around 40 ps. This is still a very long lifetime for the photoconductive switches. It is thought that self-annealing of the deep electron traps, caused by the lack of temperature control in the implanter, prevented the achievement of short lifetime in the switches.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.796790  DOI: Not available
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