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Title: High pressure optical studies of semiconductors
Author: Zhou, Haiping
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 1992
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Until this work was completed no detailed studies of the low-temperature emission of A10.48gIn0.52As under high pressures were available to the best of our knowledge. We investigated the low-temperature emission of Al0.48gIn0.52AS under high pressures from 1 bar up to 92 kbar, especially with respect to the changes in luminescence mechanisms that occur concurrently with the crossover between the direct- and indirect-related bands.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available