Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.779400
Title: MBE-grown ZnO-based nanostructures for electronics applications
Author: Kennedy, Oscar W.
ISNI:       0000 0004 7965 0961
Awarding Body: UCL (University College London)
Current Institution: University College London (University of London)
Date of Award: 2019
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Abstract:
Low-dimensional semiconductors have properties di erent from their bulk counterparts and are thus attractive components for future electronic devices. This thesis presents work on ZnO nanostructures and ZnO/ZnMgO nano-heterostructures grown by molecular beam epitaxy (MBE) for electronics applications. ZnO nanostructures are grown by gold-catalysed MBE. We show that the cut of sapphire used as a substrate determines the orientation of one-dimensional nanostructure growth. On C-plane sapphire we grow ZnO nanowires and on R-plane sapphire we grow ZnO nanobelts. The morphology of nanobelts is shown to depend on temperature with tapering reduced at higher temperatures. Field-e ect transistors based on ZnO nanobelts are fabricated to characterize the electronic properties of single nanobelts. ZnO/ZnMgO heterostructure nanowires and nanobelts are grown and characterized. We show abrupt ZnO/ZnMgO interfaces and demonstrate that the core-shell structures in nanowires increase the luminescence intensity of nanowires. Nanobelt heterostructures are characterized optically at both room temperature and cryogenic temperatures showing evidence of quantum con nement in these structures. Scanning transmission electron microscope cathodoluminescence (CL) is performed on single ZnO nanowires. We perform hyperspectral mapping of CL, in which a single nanowire is spatially mapped with full CL spectra collected at each spatial co-ordinate on the nanowire. We achieve record resolution for hyperspectral mapping and deconvolve full spectra into constituent components. This allows us to distinguish surface and defect peaks as well as CL from inter-band processes in ZnO. We perform proof-of-principle studies combining high quality RF superconducting circuits with epitaxial ZnO layers on single sapphire substrates. Such chips can be used for future experiments coupling mechanical degrees of freedom to superconducting qubits for quantum opto-mechanical experiments.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.779400  DOI: Not available
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