Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.775977
Title: High power and narrow linewidth semiconductor lasers for atomic clock
Author: Di Gaetano, Eugenio
ISNI:       0000 0004 7963 120X
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2019
Availability of Full Text:
Access from EThOS:
Full text unavailable from EThOS. Thesis embargoed until 07 Jun 2023
Access from Institution:
Abstract:
The compactness, low energy consumption and potential for volume production typical of semiconductor technology are key requirements for future miniaturised quantum systems. This thesis - funded by the Defence and Security Call 2014 on Sensing and Navigation using quantum 2.0 technologies - discusses the development of III-V semiconductor Distributed FeedBack (DFB) lasers for atomic clock systems. Specifically, the work targets devices for atomic cooling emitting at wavelengths that match the atomic transitions of cesium Cs and rubidium Rb at the wavelength of 852nm and 780nm (i.e. frequency doubled from 1560nm), and with the required performance in terms of linewidth (100kHz) and power output (100mW). These objectives were reached by working on different fronts: i) the optimization of the fabrication process to improve the robustness and repeatability of the manufacturing process, with particular emphasis on the dry etching process to ensure vertical and smooth surfaces; ii) the development of a strongly-coupled Bragg grating geometry that mitigates the detrimental impact of the so-called Reactive Ion Etching (RIE) lag; iii) the demonstration of a novel coupling chirp grating design to improve the intra-cavity field uniformity and improve the laser stability. Thanks to these design strategies and technological solutions the performance requirements in terms of output powers and linewidth were met on DFB lasers emitting at a wavelength of 1560nm. These same concepts are currently being transferred on devices fabricated on an epilayer structure emitting at 852nm.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.775977  DOI:
Keywords: TK Electrical engineering. Electronics Nuclear engineering
Share: