For solid-state power devices, there exists need for a material with a higher band gap which will result in a higher critical electric field, improved power efficiency and thermal performance. This has resulted in the use of Silicon Carbide (SiC) as a serious alternative to Silicon for power devices. SiC trench MOSFETs have attracted major attention in recent years because of 1) lower on resistance by eliminating the JFET effect which exists in lateral MOSFETs, 2) higher channel density which lowers the threshold voltage and 3) reduction of the required surface area because of the vertical channel. These advantages allow faster switching speeds and the potential for a higher density of devices leading to more compact modules. This work was focused on fabrication of the first generation of 4H-SiC trench MOSFETs in Warwick University. Two main goals were achieved in this work: a comprehensive understanding of fabrication of trenches in 4H-SiC and fabrication of first generation of 4H-SiC trench MOSFET with mobility as high as 35.