Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.755442
Title: Atomic layer deposition of tantalum doped aluminium oxide as a gate dielectric for GaN-based power transistors
Author: Partida Manzanera, T.
ISNI:       0000 0004 7428 4368
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 2017
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Abstract:
No abstract available
Supervisor: Potter, Richard J. Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.755442  DOI:
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