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Title: Resonant tunnelling diodes for THz communications
Author: Razvan, Baba
ISNI:       0000 0004 7427 4645
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2018
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Resonant tunnelling diodes realised in the InGaAs/AlAs compound semiconductor system lattice-matched to InP substrates represent one of the fastest electronic solid-state devices, with demonstrated oscillation capability in excess of 2 THz. Current state-of-the-art offers a poor DC-to-RF conversion efficiency. This thesis discusses the structural issues limiting the device performance and offers structural design optimums based on quantum transport modelling. These structures are viewed in the context of epitaxial growth limitations and their extrinsic oscillator performance. An advanced non-destructive characterisation scheme based on low-temperature photoluminescence spectroscopy and high-resolution TEM is proposed to verify the epitaxial perfection of the proposed structure, followed by recommendations to improve the statistical process control, and eventually yield of these very high-current density mesoscopic devices. This work concludes with an outward look towards other compound semiconductor systems, advanced layer structures, and antenna designs.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: QC Physics ; TK Electrical engineering. Electronics Nuclear engineering ; TP Chemical technology