Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.753628
Title: A study of current transport in Schottky diodes based on AlInSb/InSb-QW heterostructures
Author: Alshaeer, Fadwa
ISNI:       0000 0004 7426 7189
Awarding Body: Cardiff University
Current Institution: Cardiff University
Date of Award: 2018
Availability of Full Text:
Access from EThOS:
Access from Institution:
Abstract:
The major objective of this thesis is the analysis of novel AlInSb/InSb QW Schottky diodes which may play an important role in future low-power high-speed electronic devices such as FETs, as well as showing promise for high frequency rectification. Although InSb has the highest electron mobility among the III-V semiconductors, due to lattice mismatch with common binary substrates, its 2DEG systems have far less mobility than anticipated values. The large lattice mismatch between AlInSb alloy and the substrate GaAs in AlInSb/InSb system results in a high density of structural defects which results in a high leakage current. Both large leakage current and low barrier height introduce difficulties in forming good Schottky diodes. Schottky diodes in this material system are largely unexplored. Two different planar structure designs (elementary, and surface channel) were used in this thesis to form AlInSb/InSb QW Schottky diodes. Various surface treatments were trialled to suppress diode leakage current. The fabricated AlInSb/InSb QW Schottky diodes were evaluated based on I-V measurements over a wide range of temperatures 3-290 K. Various models are evaluated and successfully used to describe the I-V characteristics of these AlInSb/InSb QW Schottky diodes. Depending on the applied surface treatment, two barrier heights (Φ).
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.753628  DOI: Not available
Keywords: QC Physics
Share: