Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744803
Title: Charge carrier relaxation in halide perovskite semiconductors for optoelectronic applications
Author: Richter, Johannes Martin
ISNI:       0000 0004 7229 4116
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2018
Availability of Full Text:
Access from EThOS:
Full text unavailable from EThOS. Thesis embargoed until 01 Jan 2400
Access from Institution:
Abstract:
Lead halide perovskites have shown remarkable device performance in both solar cells and LEDs. Whilst the research efforts so far have been mainly focussed on device optimisation, little is known about the photophysical properties. For example, the nature of the bandgap is still debated and an indirect bandgap due to a Rashba splitting has been suggested. In this thesis, we study the early-time carrier relaxation and its impact on photoluminescence emission. We first study ultrafast carrier thermalization processes using 2D electronic spectroscopy and extract characteristic carrier thermalization times from below 10 fs to 85 fs. We then investigate the early-time photoluminescence emission during carrier cooling. We observe that the luminescence signal shows a rise over 2 picoseconds in CH3NH3PbI3 while carriers cool to the band edge. This shows that luminescence of hot carriers is slower than that of cold carriers, as is found in direct gap semiconductors. We conclude that electrons and holes show strong overlap in momentum space, despite the potential presence of a small band offset arising from a Rashba effect. Recombination and device performance of perovskites are thus better described within a direct bandgap model. We finally study carrier recombination in perovskites and the impact of photon recycling. We show that, for an internal photoluminescence quantum yield of 70%, we measure external yields as low as 15% in planar films, where light out-coupling is inefficient, but observe values as high as 57% in films on textured substrates that enhance out-coupling. We study the photo-excited carrier dynamics and use a rate equation to relate radiative and non-radiative recombination events to measured photoluminescence efficiencies. We conclude that the use of textured active layers has the ability to improve power conversion efficiencies for both LEDs and solar cells.
Supervisor: Friend, Richard Henry Sponsor: Winton Programme for Physics of Sustainability ; EPSRC ; Cambridge Trust
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.744803  DOI:
Keywords: semiconductor ; physics ; perovskites ; lead halide perovskites ; ultrafast spectroscopy ; femtosecond photoluminescence ; semiconductor physics ; charge carrier recombination ; charge carrier relaxation ; optoelectronics ; PLQE ; light out-coupling
Share: