Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744085
Title: MM-wave frequencies GaN-on-Si HEMTs and MMIC technology development
Author: Eblabla, Abdalla
ISNI:       0000 0004 7232 3298
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2018
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Abstract:
Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs) grown on Silicon (Si) substrates technology is emerging as one of the most promising candidates for cost effective, high-power, high-frequency Integrated Circuit (IC) applications; operating at Microwave and Millimetre (mm)-wave frequencies. To capitalise on the advantages of RF GaN technology grown on Low resistivity (LR) Si substrates; RF losses due to the Si substrate must be eliminated at the active devices, passive devices and interconnect. Low resistivity Si substrates are intrinsic prone to RF losses and high resistivity (HR) Si substrates shown to exhibit RF losses as a result of operating substrate temperature at the system level. Therefore, obtaining a viable high-performance RF GaN-on both LR and HR Si device remains a challenge for this technology. In an attempt to overcome these issues, Microwave Monolithic Integrated Circuit (MMIC)-compatible technology was developed for the first time aiming to eliminate the substrate coupling effect for the realisation of high performance passive and active devices on GaN-on-Si substrates for mm-wave MMIC applications.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.744085  DOI: Not available
Keywords: QC Physics
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