In this work, novel quantum well structures were grown by molecular beam epitaxy (MBE). Samples have been designed in order to allow access to light sources from InP based type I interband devices, for the technologically important mid-infrared (Mid-IR) (2-5 um) spectral range. Investigations of dilute nitride InGaAsN and InAsN were performed with the intent to highlight the potential availability of type-I MQW structures grown onto InP substrates emitting Mid-IR radiation. This thesis describes the successful attempt to overcome restrictions imposed by lattice mismatch and resultant critical thickness limitations as described by past experiments with these materials, where conventional III-V alloy materials are restricted to 2.3pm and dilute nitride materials have been previously reported as emitting up to 2.6pm within this strained MQW regime.