Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.742533
Title: Growth and characterisation of strained InGaAsN and InAsN type 1 multi quantum wells for mid infrared light sources based on InP
Author: Wheatley, Robert Alistair
ISNI:       0000 0004 7229 9654
Awarding Body: Lancaster University
Current Institution: Lancaster University
Date of Award: 2014
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Abstract:
In this work, novel quantum well structures were grown by molecular beam epitaxy (MBE). Samples have been designed in order to allow access to light sources from InP based type I interband devices, for the technologically important mid-infrared (Mid-IR) (2-5 um) spectral range. Investigations of dilute nitride InGaAsN and InAsN were performed with the intent to highlight the potential availability of type-I MQW structures grown onto InP substrates emitting Mid-IR radiation. This thesis describes the successful attempt to overcome restrictions imposed by lattice mismatch and resultant critical thickness limitations as described by past experiments with these materials, where conventional III-V alloy materials are restricted to 2.3pm and dilute nitride materials have been previously reported as emitting up to 2.6pm within this strained MQW regime.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.742533  DOI: Not available
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