Use this URL to cite or link to this record in EThOS:
Title: Novel antiferromagnets for spintronic devices
Author: Huminiuc, Teodor
ISNI:       0000 0004 6424 5074
Awarding Body: University of York
Current Institution: University of York
Date of Award: 2017
Availability of Full Text:
Access from EThOS:
Access from Institution:
Spin electronic or spintronic devices which are used in hard disk drive (HDD) read heads are expected to replace the current silicon based transistor technology used in volatile memories. A prime example for the net advantage of employing spin rather than electric charge manipulation is found in the newly developed magnetic random access memory (MRAM) which is proposed as a replacement for the dynamic random access memory (DRAM) based on three terminal metal-oxide-semiconductor (MOS) devices. Besides the decrease of energy consumption by a factor three arising from manipulating electron angular momentum, the magnetic memories are non-volatile hence they do not require constant power to store information. This allows for additional energy saving due to data stability when the storage device is powered off.
Supervisor: Hirohata, Atsufumi Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available