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Title: Terahertz frequency doubling circuits for communications
Author: Glynn, David William
ISNI:       0000 0004 6347 4086
Awarding Body: University of Birmingham
Current Institution: University of Birmingham
Date of Award: 2017
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Exploitation of the terahertz frequency region offers tantalising rewards over other parts of the congested spectrum, however current technologies and manufacturing methods are not yet commercially effective to capitalise on its riches. This thesis is concerned with developing new techniques to enable and improve radio frequency engineering design for tomorrow’s terahertz applications. The techniques in this thesis will provide engineer’s the knowledge to creatively tackle some of the challenges when designing at the terahertz scale. A novel design of a 9 to 18 GHz microstrip diode frequency doubler using the coupling matrix method is presented, which demonstrates new techniques for matching and integration of the circuit components. It illustrates a new approach for diode doubler design and provides a guide for solving the matching and integrating of passive circuits, such as input and output filters, to the active part of a circuit. Complex circuit interactions are controlled in the design, without the traditional reliance on circuit optimisation. Terahertz manufacturing technologies are investigated, and a 150 GHz E field plane terahertz waveguide using a polymer (SU-8) etching, layering and metal coating technology, is designed, constructed and measured. Such a device would be a fundamental component in a future terahertz frequency communication system.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: TK Electrical engineering. Electronics Nuclear engineering