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Title: IGBT design, modelling and novel devices
Author: Hsieh, Pei-Shan
ISNI:       0000 0004 6062 9767
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2015
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Insulated gate bipolar transistors