Lead zirconate titanate (PZT) is a oxide, which posseses a perovskite type structure. The material is ferroelectric making it technically useful for a diverse range of applications from thermal imaging to non-volatile integrated memory devices. Thin films of PZT are commonly deposited onto platinised-silicon (Pt(111)/Ti/SíOX/Si) bottom electrodes by chemical solution deposition (CSD). Depending on the conditions used a transient intermetallic phase Pt3Pb can form in-situ with a (111) preferred orientation during processing, which reduces the lattice mismatch between the desired perovskite phase and bottom electrode. Thereby, making it easier for the perovskite phase to both nucleate and take on a preferred (111) orientation.