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Title: Electrical conduction mechanism and conductivity switching in gallium telluride
Author: Milne, William Ireland
Awarding Body: University of London
Current Institution: Imperial College London
Date of Award: 1973
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This work describes the growth and the electrical and physical properties of single crystals of gallium telluride (GaTe). Single crystals of GaTe were grown successfully employing both a chemical vapour transport and modified Bridgman technique and preliminary measurements were carried out using differential thermal analysis (D.T.A.) and X-ray techniques to determine the crystallinity, melting point and symmetry of the samples which were generally in the form of thin platelets of between 1 - 1000 μm. thick.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available