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Title: A transmission electron microscopy study of AlGaN/GaN heterostructures
Author: Cherns, Peter David
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2007
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The use of an A1N interlayer to allow the growth of crack-free AlGaN on a GaN template is investigated. The impact of using an A1N interlayer on the active region of a device is examined by investigating a series of GaN/AlGaN quantum well structures. It is observed by WBDF that the a-type dislocations generated at the A1N interlayer form ‘staircase’ structures in the quantum well stack where all dislocation segments are in edge orientation A model is proposed where misfit dislocation segments at each well interface are formed by climb, in contrast to the dislocation glide at the lowest interface that might be expected in other systems. Both HAADF imaging and conventional TEM are used to characterise a series of Al-GaN/GaN quantum cascade laser (QCL) structures. These devices have great potential in the field of fibre optic communication. Changes in the layer spacing near V-defects, and the effects that changing substrate from sapphire to bulk GaN have on the mechanisms for relaxation in this system are identified and discussed.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available