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Title: MOVPE growth and characterisation of III-nitrides on silicon
Author: Charles, M. B.
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2006
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Gallium nitride (GaN) and its related alloys - aluminium gallium nitride (AlGaN) and indium gallium nitride (InGaN) are becoming increasingly important in the world of semiconductors and in modern life - being used to make high power transistors and LEDs. However GaN is much less understood than other commercial semiconductors, and this project looks at aspects of GaN growth, with emphasis on defect reduction and strain management. The core of this work is the MOVPE growth of III-nitrides, in particular GaN and AlGaN, on silicon substrates. In order to understand growth processes more fully, several techniques have been used to characterise the samples grown, mainly atomic force microscopy and high resolution X-ray diffraction. Additionally, photoluminescence has been used, along with transmission electron microscopy. The samples have been grown on 2 inch and 6 inch silicon substrates, with structures ranging from basic templates to Bragg reflectors and LEDs. The majority of the samples grown in this work have been test structures which have been designed to help understand certain aspects of the growth. This has lead to more sophisticated structures, with development of growth schemes which allow thick uncracked AlGaN/GaN Bragg reflectors to be grown for the first time on silicon. These Bragg reflectors have been high quality and have allowed the growth of blue LED structures on top of them. Work on LEDs has been limited, but it has been possible to grow blue emitting LEDs on 2 inch wafers. Work on 6 inch wafers has been mainly limited to analysis of uniformity of growth across the wafers, but is has been possible to grow blue LED strucutures on 6 inch silicon wafers, one of the first groups in the world to have done this.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available