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Title: Nano scale devices based on one dimensional nanostructure
Author: Cha, S. N.
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2006
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Fabrication and characterization of nanometre scale devices consisting of a suspended nanotube/nanowire and self-aligned electrodes is reported. An electromechnical switch and a field effect transistor have been realised using the nano device technology developed. The electromechanical switch has a triode structure and is designed so that a suspended carbon nanotube is mechanically switched to one of two self-aligned electrodes by repulsive electrostatic forces between the nanotube and the self-aligned electrode. The electrical measurements show well defined On and Off states with change of gate voltage. The measured threshold voltage for electromechanical switching is 3.6 V. A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The fabricated FET exhibits superior electrical performance with a transconductance of 3.06 μS, a mobility of 928 cm2/Vs and an On/Off ratio 106. The electrical characteristics are the best obtained to date for a ZnO nanowire transistor. The results are close to those reported previously for p-type Carbon Nanotube FETs. This raises the possibility of using ZnO as the n-type FET with a CNT as the p-type FET in nanometre scale complimentary logic circuits.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available