Use this URL to cite or link to this record in EThOS:
Title: Applications of the genetic algorithm optimisation approach in the design of high efficiency microwave class E power amplifiers
Author: Lu, Qing
ISNI:       0000 0004 2741 7770
Awarding Body: Northumbria University
Current Institution: Northumbria University
Date of Award: 2012
Availability of Full Text:
Access from EThOS:
Access from Institution:
In this thesis Genetic Algorithm Optimisation Methods (GA) is studied and for the first time used to design high efficiency microwave class E power amplifiers (PAs) and associated load patch antennas. The difficulties of designing high efficiency PAs is that power transistors are highly non linear and classical design techniques only work for resistive loads. There are currently no high efficient and accurate procedures for design high efficiency PAs. To achieve simplified and accurate design procedure, GA and new design quadratic equations are introduced and applied. The performance analysis is based on linear switch models and non linear circuitry push-pull methods. The results of the analytical calculations and experimental verification showed that the power added efficiency (PAE) of the PAs mainly depend on the losses of the active device itself and are nearly independent on the losses of its harmonic networks. Hence, it has been proven that the cheap material PCB FR4 can be used to design high efficiency class E PAs and it also shown that low Q factor networks have only a minor effect on efficiency, allowing a wide bandwidth to be obtained. In additional, a new procedure for designing class E PAs is introduced and applied. The active device (ATF 34143) is used. Good agreement was obtained between predicted analyses and the simulation results (from Microwave Office (AWR) and Agilent ADS software). For the practical realization, class E PAs were fabricated and tested using PCB FR4. The practical results validate computer simulations and the PAE of the class E PAs are more than 71% and Gain is over 3.8 dB when input power (Pin) is equal to 14 dBm at 2 GHz.
Supervisor: Danaher, Sean Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: F300 Physics ; H600 Electronic and Electrical Engineering