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Title: Defect and fault tolerance techniques for nano-electronics
Author: Melouki, Aissa
ISNI:       0000 0004 2708 1058
Awarding Body: University of Southampton
Current Institution: University of Southampton
Date of Award: 2011
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Nanotechnology-based devices are believed to be the future possible alternative to CMOS-based devices. It is predicted that the high integration density offered by emerging nanotechnologies will be accompanied by high manufacturing defect rates and high operation-time fault rates. This thesis is concerned with developing defect and fault tolerance techniques to address low manufacturing yield due to permanent defects and reduced computational reliability due to transient faults projected in nanoscale devices and nanometre CMOS circuits. The described research makes four key contributions. The first contribution is a novel defect tolerance technique to improve the manufacturing yield of nanometre CMOS logic circuits. The technique is based on replacing each transistor by an N2-transistor structure (N ≥ 2) that guarantees defect tolerance of all (N−1) defects. The targeted defects include stuck-open, stuck-short and bridging defects. Extensive simulation results using ISCAS benchmark circuits, show that the proposed technique achieves manufacturing yield higher than recently proposed techniques and at a reduced area overhead. The second contribution is two new repair techniques, named Tagged Replacement and Modified Tagged Replacement, to improve the manufacturing yield of nanoscale cross-bars implementing logic circuits as look-up tables (LUTs). The techniques are based on highly efficient repair algorithms that improve yield by increasing the resolution of repair. Simulation results show that the proposed techniques are able to provide higher levels of defect tolerance and have lower redundancy requirements than recently reported techniques. Another popular crossbar-based circuit implementation is nanoscale programmable logic arrays (PLAs). The third contribution is a probabilistic defect tolerance design flow that improves the manufacturing yield of nanoscale PLAs and significantly reduces post-fabrication test and diagnosis time. This is achieved by limiting defect diagnosis to the nanowire level rather than the crosspoint level as in previously proposed graph-based techniques. The final contribution involves improving both manufacturing yield and computational reliability of nanoscale crossbars implementing logic circuits as LUTs. This is achieved by combining Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes together or with N-Modular Redundancy and Bad Line Exclusion techniques. Simulation results show a significant improvement in fault tolerance by the proposed techniques (targeting fault rates upto 20%) when compared to previously reported single coding schemes
Supervisor: Al-Hashimi, Bashir Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: T Technology (General)