Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition (PLD) with an ITO (In\(_2\)O\(_3\)-10 wt.% SnO\(_2\)) target and deposited on borosilicate glass substrates. By changing independently the thickness, the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. The impact on thin film physical properties of different gas dynamics is stressed and explained. Films deposited at room temperature (RT) show poorer opto-electrical properties. The same is true for films deposited at low or high oxygen pressure. It is shown that films grown with 1 to 10 mT Oxygen pressure at 200 °C show the best compromise in terms of transmittance and resistivity. The influence of the thickness, the substrate temperature and the oxygen pressure on the microstructure and ITO film properties is discussed. A practical application (a Dye Sensitized Solar Cell) is proposed.