Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528850 |
![]() |
|||||
Title: | Modelling of steady-state and transient effects in advanced AIGaN/GaN high electron mobility transistors | ||||
Author: | Brannick, A. |
ISNI:
0000 0004 2696 6700
|
|||
Awarding Body: | The University of Essex | ||||
Current Institution: | University of Essex | ||||
Date of Award: | 2010 | ||||
Availability of Full Text: |
|
||||
Abstract: | |||||
No abstract available
|
|||||
Supervisor: | Not available | Sponsor: | Not available | ||
Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
EThOS ID: | uk.bl.ethos.528850 | DOI: | Not available | ||
Share: |