Use this URL to cite or link to this record in EThOS:
Title: Modelling of steady-state and transient effects in advanced AIGaN/GaN high electron mobility transistors
Author: Brannick, A.
ISNI:       0000 0004 2696 6700
Awarding Body: The University of Essex
Current Institution: University of Essex
Date of Award: 2010
Availability of Full Text:
Access from EThOS:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available