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Title: Micro ring resonators in silicon-on-insulator
Author: Samarelli, Antonio
ISNI:       0000 0004 2693 5007
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2011
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Silicon as a platform for photonics has recently seen a very large increase in interest because of its potential to overcome the bandwidth limitations of microprocessor interconnects and the low manufacturing cost given by the high compatibility with the already established micro-electronics industry. There has therefore been a signicant push in silicon photonics research to develop all silicon based optical components for telecoms applications. The work reported in this Thesis is con- cerned with the design, fabrication and characterisation of coupled ring resonators on silicon-on-insulator (SOI) material. The nal objective of this work is to pro- vide a robust and reliable technology for the demonstration of optical buers and delay-lines operating at signal bandwidths up to 100 GHz and in the wavelength region around 1550 nm. The core of the activity focused on the optimisation of the fabrication technology and device geometry to ensure the required device performance for the fabrication of long chains of ring resonators. The nal pro- cess has been optimised to obtain both intra-chip and chip-to-chip reproducibility with a variability of the process controlled at the nanometre scale. This was made possible by careful control of all the variables involved in the fabrication process, reduction of the fabrication complexity, close feature-size repeatability, line-edge roughness reduction, nearly vertical sidewall proles and high uniformity in the ebeam patterning. The best optical propagation losses of the realized waveguides reduced down to 1 dB=cm for 480 220 nm2 rectangular cross-section photonic wires and were consistently kept at typical values of around 1.5 dB=cm. Control of the coupling coecients between resonators had a standard deviation of less than 4 % for dierent realizations and resonance dispersion between resonators was below 50 GHz. All these gures represent the state-of-the-art in SOI photon- ics technology. Considerable eort has also been devoted to the development of ecient thermal electrodes (52 W=GHz) to obtain a recongurable behaviour of the structure and polymer inverse tapers to improve the o-chip coupling (inser- tion losses < 2 dB). Phase-preserving and error-free transmission up to 100 Gbit=s with continuously tunable optical delay up to 200 ps has been demonstrated on the nal integrated systems, proving the compatibility of these devices with advanced modulation formats and high bit-rate transmission systems.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: QC Physics ; TK Electrical engineering. Electronics Nuclear engineering