Use this URL to cite or link to this record in EThOS:
Title: The Investigation of Growth Parameters and Characterization of Dilute Nitride Semiconductors
Author: Chao, Sheng
ISNI:       0000 0004 2692 7322
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 2009
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available