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Title: Structural and Electronic Properties of III-V semiconductors studied through ab initio techniques and Empirical tight binding
Author: Garg, Raman
ISNI:       0000 0004 2676 3743
Awarding Body: The University of Manchester
Current Institution: University of Manchester
Date of Award: 2009
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Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available