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Title: Characterisation of gate oxide and high-k dielectric reliability in strained si and sige cmos transistors
Author: Yan, Liang
ISNI:       0000 0004 2678 8799
Awarding Body: University of Newcastle Upon Tyne
Current Institution: University of Newcastle upon Tyne
Date of Award: 2009
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available