This thesis contains data from micromagnetic simulations that investigate new methods for data storage and processing on the nanoscale using ferromagnetic nanowires. First I consider a magnetic memory, domain wall trap memory, which could compete with a number of existing devices that are currently in widespread use. Domain wall trap memory exhibits a 90% lower coercivity over traditional MRAM designs because, instead of remagnetizing a rectangular or oval magnetic free layer by moment rotation or domain nucleation, an existing domain wall is moved along a structured nanowire to remagnetize part of the wire. I determine the fields for de-pinning, switching and expulsion of domain walls in memory cells to show that the margins between them can be sufficiently large for reliable operation. The nudged elastic band method is used to show that domain wall trap memory is thermally stable at room temperature.