Non-volatile ferroelectric random access memories (NV-FeRAM) are largely regarded as the ideal non-volatile memory due to their highly desirable performance features. Strontium bismuth tantalate (SBT) is an emerging material for use in NV-FeRAM technology, h this thesis, a "single source" Sr-Ta heterometal precursor and a bismuth organometallic precursor were investigated as potential sources for liquid injection based chemical vapour deposition (CVD) of SBT. Two generic '-vLi processes have been explored, namely: metal organic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD). MOCVD is a well established thin fihn deposition process, whereas at the time of writing, liquid injection ALD is a relatively novel process tool. The effects of post-deposition annealing on the SBT thin fihns deposited by both methods have been characterised using a range of techniques to elucidate the structure and composition of the thin fihn materials. These have mcluded high resolution transmission electron microscopy; medium energy ion scattering; Auger electron spectroscopy; and X-ray diffraction.