Use this URL to cite or link to this record in EThOS: https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501186
Title: Application of Maxwell-Wagner polarisation in monolithic technologies
Author: Prodromakis, Themistoklis
ISNI:       0000 0004 2670 8576
Awarding Body: Imperial College London
Current Institution: Imperial College London
Date of Award: 2009
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Abstract:
This work is a study on the waveguiding properties of laminar substrates consisting of metal-insulator-semiconductor (MIS) layers. The propagation characteristics of MIS lines are controlled by the resistivity of the substrate, the operating frequency and the ratio of the semiconductor to insulator layer thicknesses. What is intriguing about MIS microstrip structures is the very large slowing factor occurring at a band of intermediate frequen-cies (-500 MHz). A strong interfacial polarisation (Maxwell-Wagner polarisation) taking place at dielectric interfaces in multilayer structures is responsible for the slow propagation mode. This phenomenon has previously been extensively examined, both theoretically and experimentally in the context of data dispersion for high speed data buses. Structures supporting the Maxwell-Wagner polarisation, exhibit abnormally small phase velocities proportional to the square root of insulator to semiconductor thickness ratio. To the lowest approximation, microstrip lines on laminar substrates, resemble microstrip lines on high-K dielectrics. This concept has many ramifications and is the central theme behind most of the ideas presented here. Presently, an investigation has been undertaken, covering the important parameters that establish slow-wave modes. Measured results on Si-based structures demonstrate that the available theory may well be too pessimistic in some of its predictions. Specimens based on GaAs membranes can show larger than expected slowing-factors with the attainable dielectric losses being at lower levels than in Si, for the same predicted electric permittivity. Additionally, a novel experimental platform has been developed, based on a macroscopic model of the MIS microstrip, with the semiconductor layer emulated by a liquid "crystal" whose conductivity can be varied. The physical dimensions of each layer can be easily adjusted, which facilitates the investigation of slow-wave characteristics over a wide range of parameters.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.501186  DOI: Not available
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