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Title: Electron microscopy of defects in ultra-wide band gap nitrides
Author: Sahonta, Suman-Lata
ISNI:       0000 0001 3545 1651
Awarding Body: University of Bristol
Current Institution: University of Bristol
Date of Award: 2005
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AlGaN is currently being studied for the development of UV applications, owing to its ultra-wide band gap which varies with aluminium concentration. Key challenges are to reduce the density of threading dislocations in AlGaN films which arise due to lattice inbrnatch with the substrate, and to p- and n-dope nitride films to obtain sufficient carrier ncentrations. In this study, transmission electron microscopy (TEM) was used to examine the microstructure of AlGaN/GaN heterostructures for use in UV light-emitters.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available