| Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490983 |
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| Title: | Growth and characterisation of III-V semiconductor nanostructures | ||||
| Author: | Grant, Victoria Anne |
ISNI:
0000 0001 3511 7709
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| Awarding Body: | University of Nottingham | ||||
| Current Institution: | University of Nottingham | ||||
| Date of Award: | 2008 | ||||
| Availability of Full Text: |
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| Abstract: | |||||
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This thesis describes the growth and characterisation of III-V semiconductor materials and nanostructures. The material was grown by molecular beam epitaxy (MBE) and characterised using a range of techniques including atomic force microscopy (AFM), cross-sectional scanning tunnelling microscopy (XSTM) and x-ray diffraction (XRD).
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| Supervisor: | Not available | Sponsor: | Not available | ||
| Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
| EThOS ID: | uk.bl.ethos.490983 | DOI: | Not available | ||
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