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Title: Growth and characterisation of III-V semiconductor nanostructures
Author: Grant, Victoria Anne
ISNI:       0000 0001 3511 7709
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 2008
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This thesis describes the growth and characterisation of III-V semiconductor materials and nanostructures. The material was grown by molecular beam epitaxy (MBE) and characterised using a range of techniques including atomic force microscopy (AFM), cross-sectional scanning tunnelling microscopy (XSTM) and x-ray diffraction (XRD).
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available