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Title: Radiation damage in copper indium diselenide
Author: Hinks, Jonathan A.
ISNI:       0000 0001 3578 9337
Awarding Body: University of Salford
Current Institution: University of Salford
Date of Award: 2007
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A study of radiation damage in copper indium diselenide (CIS) is presented. The build up of extended defects and the conditions for amorphisation have been explored. In particular, dislocation loops have been characterised and the influence of composition and temperature on amorphisation has been investigated. In situ and ex situ transmission electron microscopy (TEM) have been used to examine the effects on CIS of irradiation with 400 keV xenon ions at both ambient and cryogenic temperatures. Significant portions of the reciprocal lattice of CIS have been recorded using electron diffraction and these are presented alongside computational results. The zone-axis pattern maps produced in this way have been employed in the TEM analysis of dislocation loops which were found to form as a result of irradiation at room temperature. To facilitate this work, CIS bulk-material containing macroscopic single-crystals has been produced using the Bridgman growth technique. Both grown and supplied CIS have been characterised using methods including: electron dispersive x-ray spectroscopy to determine composition; x-ray powder diffraction to verify crystallinity; and hot-probe carrier analysis to identify conductivity type. CIS is a candidate for high-efficiency radiation-hard solar cells for use in extraterrestrial environments. Whilst the ability of CIS-based photovoltaic devices to withstand radiation has been clearly demonstrated in the laboratory and on orbit, the underlying mechanisms by which it achieves this resistance are unclear. This thesis attempts to explain these properties of CIS and to give insight into the means by which they arise.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Solar cells, Extraterrestrial environments