Use this URL to cite or link to this record in EThOS:
Title: An in-situ TEM study of the formation and annealing of the damage resulting from single ion impacts in crystalline silicon
Author: Edmondson, Philip D.
ISNI:       0000 0001 3438 3538
Awarding Body: University of Salford
Current Institution: University of Salford
Date of Award: 2007
Availability of Full Text:
Access from EThOS:
The work presented in this thesis describes both the thermal annealing of damage created in silicon due to low fluence ion implantation and the accumulation of that damage (to full amorphousness) at higher fluences. The technique utilised was in situ transmission electron microscopy (TEM).
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available