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Title: Micro-electronic device fabrication using advanced focused ion beam and related techniques
Author: Luxmoore, Issac J.
ISNI:       0000 0001 3614 2244
Awarding Body: Sheffield
Current Institution: University of Sheffield
Date of Award: 2007
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In order to rapidly prototype novel devices with nanoscale precision, new fabrication techniques which can provide high resolution and a quick tum-around are increasingly important in research and development. The focused ion beam (FIB) system is one such instrument and provides the user with the ability to both remove and deposit material with sub lOOnm accuracy without the need for a mask or resist. In this work, focused ion beam technology has been assessed as a technique for prototype microelectronic device fabrication in three main areas.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available