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Title: Telecommunication wavelength InP based avalanche photodiodes
Author: Tan, Lionel Juen Jin
ISNI:       0000 0001 3497 686X
Awarding Body: University of Sheffield
Current Institution: University of Sheffield
Date of Award: 2008
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A systematic study of the avalanche multiplication behaviour in InP has been performed on a series of diodes with avalanche region widths, w, ranging from 2.50 to 0.08 μm, covering a wide electric field range from 180 to 850kV/cm. The local model for impact ionisation is found to increasingly overestimate the multiplication at low electric fields as w decreases due to the presence of dead space. The dead space is also found to decrease the excess noise. An excess noise factor of F = 3.5 at multiplication factor M= 10 was measured, the lowest value reported so far in InP.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available