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Title: Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
Author: Goh, Yu Ling
ISNI:       0000 0001 3501 6748
Awarding Body: Sheffield
Current Institution: University of Sheffield
Date of Award: 2008
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This work investigates the avalanche characteristics of ln0.53Ga0.47As, In0.52Al0.48As and type-II heterojunction material systems for applications in telecommunication and next generation mid-wave infrared avalanche photodiodes (APDs). This work carries out the first ever reported excess noise measured on a series of In0.53Ga0.47As p+-in+& diodes Electron initiated multiplication exhibit very low excess noise due to the large difference between the electron and hole ionisation coefficients in In0.53Ga0.47As. The behaviour is unlike Ge, which has a similar spectral response.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available