| Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.488560 |
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| Title: | Experimental and theoretical studies of rare earth doped 111-nitride semiconductor properties. | ||||
| Author: | Rogan, Irman S. |
ISNI:
0000 0001 3532 2884
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| Awarding Body: | University of Strathclyde | ||||
| Current Institution: | University of Strathclyde | ||||
| Date of Award: | 2008 | ||||
| Availability of Full Text: |
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| Abstract: | |||||
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In this thesis I present optical and structural investigations of RE ions doped in-situ or implanted into III-nitride semiconductors. The optical studies used cathodoluminescence (CL), photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. The structural properties employed atomic force microscopy (AFM), scanning electron microscopy (SEM), Rutherford backscattering spectrometry (RBS) and x-ray Diffraction (XRD) techniques.
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| Supervisor: | Not available | Sponsor: | Not available | ||
| Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
| EThOS ID: | uk.bl.ethos.488560 | DOI: | Not available | ||
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