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Title: New precursors for the deposition of Hf02 and ZrO2 by MOCVD and ALD
Author: O'Kane, Ruairi
ISNI:       0000 0001 3453 1641
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 2007
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Zr02 and Hf02 are two high-pemitivity (lC) dielectric oxides that are currently being investigated as alternatives to Si02 as the dielectric insulating layer in subO. lflm CMOS technolqgy and capacitor layers in .the next generation DRAM. Metal organic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of the these high-lC dielectric oxides. This study describes the preparation ofnew metal-alkoxides, metallocenes . and ansa-bridged metilllocenes of zirconium and hafnium for use as precursors in MOCVD and ALD. The structure of the metal-alkoxides [Zr(OIBu)2(dmop)2] (1), [Hf(OIBu)2(dmop)2] (2), [Hf(dmop)4] (3), [Hf(OIBu)2(dmoph)2] (4), [Hf2(flr O)(dmoph)6] (7), [Zr(mph)4] (8), [Hf(mph)4] (9), [Hf2(mph)6][(CH3)2NH2] (10) have been determined by single crystal X-ray diffraction (XRD). The preparation of a series of metallocenes of hafnium is described [Cp2HfMe(OMe)] (11), [Cp2HfMe(OEt)] (12), [Cp2HfMe(Oipr)] (13), [Cp2Hf(OMe)2] (14), [Cp2Hf(OEt)2] (15), [Cp2Hf(Oipr)2] (16), [Cp2Hf(OIBu)2] (17), [Cp2Hf(mmp)2] (18), [(Me-Cp)2HfMe(OMe)] (19), [(Me-Cp)2HfMe(OEt)] (20), [(MeCp) 2HfMe(Oipr)] (21), [(Me-Cp)2HfMe(OIBu)] (22), [(Me-Cp)2HfMe(mmp)] (23) and the structure of [Hf(T\5-C5~)2Cl(CH3)] (24) has been determined by single crystal XRD. Chapter 4 describes the synthesis of the. ansa-bridged and hafnium [Zr{H2C(C5~)2}Me2] (25), [Hf{H2C(C5~)2}Me2] (26), [Zr{(CH3)C(C5~)}(CH3)2] (27), and [Hf{(CH3)C(C5~)}(CH3)2] (28). This project involves the investigation of a range new zirconium and hafnium alkoxides and metallocenes with the aim of developing improved MOCVD . and ALD precursors.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available