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Title: The structure and properties of pure silver and gold electrodeposits
Author: Sheppard, K. G.
ISNI:       0000 0001 3403 9913
Awarding Body: Birmingham University
Current Institution: University of Birmingham
Date of Award: 1979
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High-power microwave semi-conductor devices based on silicon and gallium arsenide are energetically inefficient, much of the power injected being dissipated thermally. Good heat-sinking of these devices is, therefore, essential and the physical properties of silver and gold suggest their application. The provision of electrodeposited silver and gold heat-sinks is discussed, concentrating particularly on the requirements for good device performance and efficient manufacture. Additionally, some possible influences on device reliability are considered.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available