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Title: The effects of oxide growth on the distribution of impurities in silicon.
Author: Heywood, G.
ISNI:       0000 0001 3555 7325
Awarding Body: Council for National Academic Awards
Current Institution: Open University
Date of Award: 1979
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available