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Title: A study of the turn-on mechanisms in thyristors
Author: Fong Yan, W.
ISNI:       0000 0001 3472 2042
Awarding Body: Brunel University
Current Institution: Brunel University
Date of Award: 1975
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Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors.
Supervisor: Hogarth, C. A. ; Fulop, W. Sponsor: Signal Co. Ltd
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Plasma spreading velocity ; Signal current ; Gain value ; n-p-n transistor ; Turning-on area