| Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.435758 |
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| Title: | Electron trapping in gate dielectrics and NBTI of MOSFETs | ||||||
| Author: | Chang, Mo Huai |
ISNI:
0000 0001 3528 1795
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| Awarding Body: | Liverpool John Moores University | ||||||
| Current Institution: | Liverpool John Moores University | ||||||
| Date of Award: | 2006 | ||||||
| Availability of Full Text: |
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| Abstract: | |||||||
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No abstract available
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| Supervisor: | Not available | Sponsor: | Not available | ||||
| Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||||
| EThOS ID: | uk.bl.ethos.435758 | DOI: | |||||
| Keywords: | TK Electrical engineering. Electronics. Nuclear engineering | ||||||
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