| Use this URL to cite or link to this record in EThOS: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391785 |
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| Title: | Physics and technology of silicon RF power devices. | ||||
| Author: | Cao, Guangjun. |
ISNI:
0000 0001 3519 1351
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| Awarding Body: | De Montfort University | ||||
| Current Institution: | De Montfort University | ||||
| Date of Award: | 2000 | ||||
| Availability of Full Text: |
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| Abstract: | |||||
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No abstract available
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| Supervisor: | Not available | Sponsor: | Not available | ||
| Qualification Name: | Thesis (Ph.D.) | Qualification Level: | Doctoral | ||
| EThOS ID: | uk.bl.ethos.391785 | DOI: | Not available | ||
| Keywords: | MICROELECTRONICS; SILICON; MOSFET; ELECTRIC FIELDS; COMPUTERIZED SIMULATION; SEMICONDUCTOR JUNCTIONS; JUNCTION TRANSISTORS; ELECTRIC CONDUCTIVITY; BREAKDOWN | ||||
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